Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces

Authors
Salman, SA Katircioglu, S Erkoc, S
Citation
Sa. Salman et al., Adsorption of hydrogen and oxygen on single and double layer stepped Si(100) surfaces, INT J MOD B, 15(16), 2001, pp. 2261-2274
Citations number
57
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN journal
02179792 → ACNP
Volume
15
Issue
16
Year of publication
2001
Pages
2261 - 2274
Database
ISI
SICI code
0217-9792(20010630)15:16<2261:AOHAOO>2.0.ZU;2-0
Abstract
We have investigated the electronic band structure of hydrogen and oxygen a dsorbed single and double layer stepped Si(100) surfaces by Empirical Tight Binding (ETB) method. The total electronic energies of the H,O-S-A, D-A, D -B type stepped Si(100) systems are calculated with limited number of hydro gen and oxygen atoms separately to find out the most probable adsorption si tes of the adatoms in the initial stage of hydrogenation and oxidation.