Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots

Authors
Yakimov, AI Dvurechenskii, AV Nikiforov, AI
Citation
Ai. Yakimov et al., Spatial separation of electrons in Ge/Si(001) heterostructures with quantum dots, JETP LETTER, 73(10), 2001, pp. 529-531
Citations number
7
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
73
Issue
10
Year of publication
2001
Pages
529 - 531
Database
ISI
SICI code
0021-3640(2001)73:10<529:SSOEIG>2.0.ZU;2-2
Abstract
It is shown experimentally that the excitation of interband optical transit ions in arrays of Ge/n-Si(001) quantum dots leads to a decrease in the conc entration of electrons in the conduction band. The phenomenon observed is d ue to the formation of negatively charged exciton complexes in Ge islands a nd represents the first experimental confirmation of the spatial separation of electrons in the silicon matrix surrounding the islands. (C) 2001 MAIK "Nauka/ Interperiodica".