Citation
A. Gaarder et al., Dopant distribution in selectively regrown InP : Fe studied by time-resolved photoluminescence, J CRYST GR, 226(4), 2001, pp. 451-457
Citations number
19
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
226
Issue
4
Year of publication
2001
Pages
451 - 457
Database
ISI
SICI code
0022-0248(200108)226:4<451:DDISRI>2.0.ZU;2-X
Abstract
We apply time-resolved photoluminescence with 1 mum spatial resolution for
the characterization of iron distribution in semi-insulating InP:Fe epitaxi
al layers regrown by hydride vapor-phase epitaxy around etched mesas. The I
nP:Fe regrowth was carried out on InP:S mesas etched both along the [110] a
nd [110] crystallographic directions, as well as on InP/InGaAsP in-plane la
sers. In all cases, the Fe concentration was found to be close to the targe
t values and showed little variation along the regrown layers. (C) 2001 Els
evier Science B.V. All rights reserved.