Application of atomic scale STEM techniques to the study of interfaces anddefects in materials

Incoherent imaging and analysis techniques in the scanning transmission ele ctron microscope (STEM) provide the potential to map changes in structure, composition and bonding that occur at materials interfaces and defects on t he fundamental atomic scale. Such comprehensive characterization capabiliti es permit a detailed analysis of the structure-property relationships of in terfaces and defects to be performed. In this paper, we discuss the resolut ion limits of such techniques in the JEOL 2010F STEM/ TEM operating both un der standard conditions and at elevated temperatures. Examples of the use o f such techniques to quantify the atomic scale defect chemistry at interfac es and defects in perovskite oxides, the growth and structure of II-VI and III-V quantum dots and the electronic structure of threading dislocations i n GaN will also be presented.