Structural imperfection of beta-Si3N4 crystals associated with nucleation

Citation
Ff. Xu et al., Structural imperfection of beta-Si3N4 crystals associated with nucleation, J ELEC MICR, 50(3), 2001, pp. 265-269
Citations number
9
Categorie Soggetti
Multidisciplinary
Journal title
JOURNAL OF ELECTRON MICROSCOPY
ISSN journal
00220744 → ACNP
Volume
50
Issue
3
Year of publication
2001
Pages
265 - 269
Database
ISI
SICI code
0022-0744(2001)50:3<265:SIOBCA>2.0.ZU;2-R
Abstract
Some kinds of dense strain contrast in beta -Si3N4 have been considered as dislocation tangles formed during mechanical milling. However, our present electron microscopic analyses indicate that the strain contrast with radial contours is not in the least attributed to the dislocations but rather to the subgrain boundaries associated with the initial growth of the crystal, i.e. the nucleation. A number of growth variants, independently nucleated o n the surface of a single Si-N cluster, coarsen and form closure mistakes w hen they approach, giving rise to the formation of subgrain boundaries exte nded from the core. The subgrain boundaries are found to locate only on {10 0}, {110} and {101} planes of the beta -Si3N4 crystal structure.