Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

The diffusion of Sb and B in both Si and SiGe is studied in this work. Inje ction of both interstitial- and vacancy-type point defects using rapid ther mal annealing (RTA) in both NH3 and O-2 atmospheres is calibrated for Sb di ffusion in Si, before examining Sb diffusion in SiGe and B diffusion in Si and SiGe. Measurement of the diffusion retardation or enhancement under def ect injection conditions will elucidate the diffusion mechanism and allow d etermination of the diffusivity, necessary for modeling of device fabricati on processes. These experiments confirm the predominant mechanism for diffu sion of Sb in Si and SiGe to be vacancy-mediated, while the predominant mec hanism for B appears to be interstitial-mediated in Si and SiGe. The diffus ivity values measured for B in Si and SiGe are reported. (C) 2001 Kluwer Ac ademic Publishers.