Radiation damage of N-MOSFETS fabricated in a BiCMOS process

Results are presented of a study on the radiation damage and its recovery b ehavior resulting from thermal annealing of n-MOSFETs fabricated in a 0.8-m um single-well BiCMOS process, subjected to gamma -rays, 1-MeV electrons an d 1-MeV neutrons. After irradiation, the base (substrate) current and inter face trap density normally increase with increasing fluence. This result po ints out that both ionization damage in the gate oxide and lattice defects in the p-well are induced by the irradiation. The interface trap density re covers by 85% for gamma -ray irradiation with a fluence of 1 x 10(8) rad, a fter a 300 degreesC annealing. (C) 2001 Kluwer Academic Publishers.