Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures

The conduction band offset for strained Si1-x-yGexCy layers grown on Si(0 0 1) is estimated by considering separately the hydrostatic strain, the unia xial strain, and the intrinsic chemical effect of Ge and C. Tensile-straine d C-containing layers provide a conduction band offset DeltaE(C) suitable f or electron confinement. At given DeltaE(C) introducing Ge in C-containing alloys allows us to reduce the strain, which should be beneficial to the th ermal stability. With a view to n-channel field effect transistor (FET) app lication on Si substrate, the in-plane electron mobility in tensile ternary layers is calculated using a Monte Carlo transport simulation. The impact of alloy scattering is emphasized. (C) 2001 Kluwer Academic Publishers.