In this work diamond-like carbon (DLC) films were deposited by d.c. magnetr
on sputtering using a graphite target and argon as the discharge gas. Hydro
gen gas was introduced in the discharge chamber to produce hydrogenated DLC
films. By increasing the hydrogen flow from zero to 22% of the total flow,
the following modifications of the film properties were observed: a decrea
se in the r.m.s. roughness (from 0.45 to 0.21 nm); an increase in the elect
rical resistivity (from 5 x 10(6) Ohm cm to 2.5 x 10(8) Ohm cm), while the
relative dielectric constant remained almost constant at about 3.3. Increas
ing the substrate temperature, we observed a logarithmic decrease of the el
ectrical resistivity of the films, caused by a self-annealing process of th
e DLC film during the deposition. This decrease was faster for the hydrogen
ated films, due to the additional effect of the dehydrogenation. The Raman
spectra analyses of these films are in agreement with these observations. (
C) 2001 Kluwer Academic Publishers.