Promising thin films (WO1.05S2 and WO1.35S2.2) as positive electrode materials in microbatteries

Tungsten oxysulfide: thin films (WOySz) have been prepared by reactive radi o-frequency magnetron sputtering using a WS2 target and a mixture of argon and oxygen gas. The composition, the texture and the structure depend on th e sputtering parameters, such as the oxygen partial pressure and the total pressure (Ar + O-2) For a total pressure of 1 Pa, the range of the chemical composition is wide, from WS2 when no oxygen gas is introduced in the cham ber, to WO3S0.02 when the oxygen partial pressure is equal to 10(-2) Pa. Tw o amorphous thin films (WO1.05S2 and WO1.35S2.2) have given promising elect rochemical performances as positive electrode in the cell: Li/LiAsF6, 1M EM C/WOySz with a current density up to 37 muA/cm(2) between 1.6 and 3 V. (C) 2001 Elsevier Science B.V. All rights reserved.