Cleaving oxide films using hydrogen implantation

Authors
Thevuthasan, S Jiang, W Weber, WJ
Citation
S. Thevuthasan et al., Cleaving oxide films using hydrogen implantation, MATER LETT, 49(6), 2001, pp. 313-317
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
49
Issue
6
Year of publication
2001
Pages
313 - 317
Database
ISI
SICI code
0167-577X(200107)49:6<313:COFUHI>2.0.ZU;2-7
Abstract
Precise cleaving of oxide films with known thickness using hydrogen implant ation and subsequent annealing was investigated using strontium titanate (S rTiO3) as a model material. Rutherford backscattering in channeling geometr y (RBS/C), nuclear reaction analysis (NRA), and scanning electron microscop y (SEM) have been used to characterize this process. (C) 2001 Elsevier Scie nce B.V. All rights reserved.