Modeling of minimum surface potential and sub-threshold swing for grooved-gate MOSFETs

We present a new analytical model derived from Poisson equation for the min imum surface potential (Phi (m)) and sub-threshold swing (S) for grooved-ga te metal oxide semiconductor field effect transistor (MOSFETs). The relatio nship between the groove corner radius (r(0)), corner angle (alpha) and dev ice characteristic length (lambda) is given. The model can be used to find a lower value of r(0) at which smaller potential barrier height can be achi eved in grooved-gate MOSFETs compared to other planar and double-gate devic es. The study confirms that the present device is resistant to potential ba rrier lowering, and is also considerably strong. Sub-threshold swing values of the present device are found to be lower than that of the double-gate S OI MOSFETs, confirming the same from device simulator. (C) 2001 Elsevier Sc ience Ltd. All rights reserved.