A spectre-microscopic approach for thin film analysis: Grain boundaries inmc-Si and Sn/SnO2 nano particles

Synchrotron radiation based spectro-microscopy is shown to be an exciting t ool for elemental analysis in the field of heterogeneous interfaces, thin f ilms, and device technology. Results are reported, taken with a spectromete r that enables the combination of a photoemission electron microscope (PEEM ) with photoelectron spectroscopies (XPS, UPS) operated at a high brillianc e undulator beam line at BESSY. The properties of me-Si (multi crystalline silicon) are of interest because of their applications in low priced photovoltaic devices. An example of ho w to analyze the surface potentials of such surfaces without removing the n ative oxide is given. Tin nano-scale particles are shown to be the decisive factor affecting the corrosion prevention of passivated tinplate surfaces.