GaAs structures for X-ray imaging detectors

Authors
Ayzenshtat, GI Bakin, NN Budnitsky, DL Drugova, EP Germogenov, VP Khludkov, SS Koretskaya, OB Okaevich, LS Porokhovnichenko, LP Potapov, AI Smith, KM Tolbanov, OP Tyazhev, AV Vilisova, MD Vorobiev, AP
Citation
Gi. Ayzenshtat et al., GaAs structures for X-ray imaging detectors, NUCL INST A, 466(1), 2001, pp. 25-32
Citations number
15
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
466
Issue
1
Year of publication
2001
Pages
25 - 32
Database
ISI
SICI code
0168-9002(20010621)466:1<25:GSFXID>2.0.ZU;2-K
Abstract
A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive Ga As layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is presented in this work. Advantages and disadvantages of the proposed methods of formation of high-resistive layers, their elect rophysical characteristics and properties are examined. Limit parameters of the detector structures which can be achieved by using a combination of te chnological methods are analyzed. (C) 2001 Published by Elsevier Science B. V.