It has been observed that only a part of the AlxGa1-xAs graded-gap layer wi
th the energy gap gradient g > 20 eV/cm is active as a X-ray luminescence s
ource. The thickness of the active layer is 30-50 mum. To increase the dete
ctors optical response efficiency, the following methods are proposed and t
ested:
1. Reflection of the X-ray luminescence light, generated in the bulk AlxGa1
-xAs layer, inside the total reflection angle theta;
2. Optical stimulation of the electron-hole radiative recombination. (C) 20
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