Responsivity measurements have been performed on commercial silicon photode
tectors in the UV range 200-400 nm. The microstrip and pixel detectors have
been reverse biased in fully depleted condition (more than 25V reverse bia
s) and in partially depleted condition (5V reverse bias). We have also perf
ormed measurements in back illumination geometry, of particular interest in
most industrial applications. Promising results obtained with commercial p
hotodetectors in the UV range in terms of photocurrent stability and sensit
ivity open a variety of applications. (C) 2001 Published by Elsevier Scienc
e B.V.