An integrating CMOS APS for X-ray imaging with an in-pixel preamplifier

Citation
Ma. Abdalla et al., An integrating CMOS APS for X-ray imaging with an in-pixel preamplifier, NUCL INST A, 466(1), 2001, pp. 232-236
Citations number
8
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
466
Issue
1
Year of publication
2001
Pages
232 - 236
Database
ISI
SICI code
0168-9002(20010621)466:1<232:AICAFX>2.0.ZU;2-2
Abstract
We present in this paper an integrating CMOS Active Pixel Sensor (APS) circ uit coated with scintillator type sensors for intra-oral dental X-ray imagi ng systems. The photosensing element in the pixel is formed by the p-diffus ion on the n-well diode. The advantage of this photosensor is its very low direct absorption of X-rays compared to the other available photosensing el ements in the CMOS pixel. The pixel features an integrating capacitor in th e feedback loop of a preamplifier of a finite gain in order to increase the optical sensitivity. To verify the effectiveness of this in-pixel preampli fication, a prototype 32 x 80 element CMOS active pixel array was implement ed in a 0.8 mum CMOS double poly, n-well process with a pixel pitch of 50 m um. Measured results confirmed the improved optical sensitivity performance of the APS. Various measurements on device performance are presented. (C) 2001 Elsevier Science B.V. All rights reserved.