The influence of strain on defect generation by displacement cascades in alpha-iron

Citation
F. Gao et al., The influence of strain on defect generation by displacement cascades in alpha-iron, NUCL INST B, 180, 2001, pp. 187-193
Citations number
11
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
180
Year of publication
2001
Pages
187 - 193
Database
ISI
SICI code
0168-583X(200106)180:<187:TIOSOD>2.0.ZU;2-F
Abstract
Although there have been numerous computer-simulation studies of the damage created by displacement cascades in metals, little attention has been paid to the influence of stress on defect generation in the primary cascade pro cess. In the present work. molecular dynamics (MD) has been used to investi gate defect production and clustering by displacement cascades in alpha -ir on under uniform tensile strain. Cascades of 10 keV primary-recoil energy h ave been simulated in a single crystal with strain of 0%, 0.1%, 0.5% or 1% applied along a <1 1 1 > axis, with at least four events modelled for each condition. The results show that the number of interstitial and vacancy def ects is smaller in the strained models, particularly for the strain of 0.1% . This decrease in the number of defects is possibly related to the effect of strain on self-interstitial motion. leading to enhanced recombination wi th vacancies. The number of interstitials in clusters is approximately inde pendent of applied strain, but the fraction of interstitials aligned parall el to the strain axis increases with increasing strain. The effect is small at 0.1%, strain, but most single interstitials are created in this orienta tion at 0.5% and all single and clustered interstitials are aligned at 1%. These results are discussed in terms of the influence of strain on defect f ormation energy and the mobility of interstitials. (C) 2001 Elsevier Scienc e B.V. All rights reserved.