We have developed a new technique for the fabrication of complex coupled di
stributed feedback laser (DFB) lasers. A metal grating patterned lateral to
a narrow ridge waveguide laser couples to the evanescent part of the guide
d mode. No regrowth is required for the processing, which makes this approa
ch applicable to all material systems. DFB lasers fabricated from InGaAs/Al
GaAs quantum well and dot lasers, GaTnNAs DFB lasers emitting at 1.3 mum an
d long wavelength lasers at 2 mum based on InGaSbAs/AlGaSbAs structures are
described. The lasers show low thresholds, good efficiencies and a high si
demode suppression ratio. (C) 2001 Elsevier Science B.V. All rights reserve
d.