Luminescence of silicon nanostructured by irradiation with heavy ions

The ion-beam formation and luminescence properties of nanosystem consisting of silicon nanocrystals within amorphous silicon are investigated. The sys tem is produced with Kr+ (80 keV) irradiation, The appearance of the nanocr ystals confined by overlapped amorphous regions (formed up along ion tracks ) is simulated by the Monte-Carlo method. Tt is shown that the system exhib its the luminescence spectrum with the peaks that are characteristic for am orphous silicon and silicon nanocrystals, respectively. The changes of lumi nescence spectra with dose and with measuring temperature are presented. (C ) 2001 Elsevier Science B.V. All rights reserved.