B. Unal et al., Photovoltaic properties of a novel stain etched porous silicon and its application in photosensitive devices, OPT MATER, 17(1-2), 2001, pp. 79-82
Photovoltaic (PV) properties of porous silicon (PS) produced by a novel sta
in (chemical) etch solution based on fluoroboric (HBF4) acids are described
for the first time. Sandwich structure devices in which semi-transparent c
ontinuous gold electrodes are deposited on stain-etched PS have been observ
ed to show high efficiency in photocurrent under visible light exposure. Ad
ditionally, palladium (Pd) metallization of the nanoporous silicon (Si) has
been performed using a new technique of electroless metal deposition (EMD)
. The resulting sandwich devices show effective PV results, and with the us
e of a nitrogen dye laser, the decay dynamics of the stain etched and elect
roless metal-deposited PV devices have been characterized in the dark and u
nder room light (RL). The PV decay times are observed to be of the order of
microseconds, and vary with etch duration as well as with the details of t
he EMD. Therefore, the metal-coated PS has great potential for application
in solar cells and photodetectors, since efficient, stable and widely photo
responsive devices can be produced. The process is also more cost-effective
than current technologies since there is no necessity for antireflection c
oatings, and there is also a reduction of device fabrication steps. (C) 200
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