Role of defects in Si/SiO2 quantum wells

Authors
Degoli, E Ossicini, S
Citation
E. Degoli et S. Ossicini, Role of defects in Si/SiO2 quantum wells, OPT MATER, 17(1-2), 2001, pp. 95-98
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
17
Issue
1-2
Year of publication
2001
Pages
95 - 98
Database
ISI
SICI code
0925-3467(200106/07)17:1-2<95:RODISQ>2.0.ZU;2-P
Abstract
The optical properties of Si/SiO2 superlattices (SLs) as a function of the Si layer thickness have been, for the first time, theoretically investigate d. Through ah initio calculations we consider fully passivated structures, the presence of O vacancy at the Si/SiO2 interface or in the SiO2 matrix. W e find that quantum confined states and O-related defect states play a key role in the experimentally observed visible luminescence in Si/SiO2 confine d systems. (C) 2001 Elsevier Science B.V. All rights reserved.