Blue and red luminescence from Si ion-irradiated SiO2/Si/SiO2 layers

Photoluminescence (PL) from the Si ion-irradiated SiO2/Si/SiO2 layers on Si substrate at room temperature has been studied to elucidate the origins of the blue and red luminescence. A luminescence band around 450 nm was obser ved from as-irradiated sample, which was found to be originated from the di amagnetic defect known as Bz band generated by Si ion irradiation. The inte nsity of this band increases with the increase of annealing temperatures up to a critical temperature. After annealing at 1100 degreesC, the defect-re lated PL peaks around 450 and 600 nm disappear and a new PL peak appears ar ound 700 nm. This luminescence band is attributed to similar to5 nm-sized S i nanocrystals formed along the Si layer between SiO2 layers. (C) 2001 Else vier Science B.V. All rights reserved.