Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals

Citation
J. Diener et al., Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals, OPT MATER, 17(1-2), 2001, pp. 135-139
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
17
Issue
1-2
Year of publication
2001
Pages
135 - 139
Database
ISI
SICI code
0925-3467(200106/07)17:1-2<135:SLAPFC>2.0.ZU;2-G
Abstract
We report efficient low-temperature anti-Stokes photoluminescence (upconver ted photoluminescence= UPL) at resonant excitation of coupled silicon nanoc rystals (NCs) in porous silicon (PSi). This photoluminescence is absent in strongly oxidized porous silicon and oxidized silicon nanocrystals. The UPL is a result of resonant excitation of electron-hole (e-h) pairs spatially separated in neighboring crystals with different band-gap. II is generated by the excitation of a second e-h pair in the larger of the two crystals an d Anger ejection of a carrier into the smaller one, with the larger band-ga p. (C) 2001 Elsevier Science B.V. All rights reserved.