M. Modreanu et al., Investigation on optical and microstructural properties of photoluminescent LPCVD SiOxNy thin films, OPT MATER, 17(1-2), 2001, pp. 145-148
Amorphous silicon oxynitride (a-SiOchiNgamma) films of various compositions
were deposited by low-pressure chemical vapour deposition (LPCVD) at 860 d
egreesC and 400 mTorr, using a mixture of SiCl2H-NH3-N2O. The dependence of
the film properties on the deposition temperature and the gas flow ratio w
as studied by spectroellipsometry (SE) and infrared spectroscopy (IR), To c
alculate the optical and microstructural parameters of the films from SE da
ta, three different approaches (Bruggeman-EMA, Cauchy and Sellmeier) were u
sed. The comparison of the results shows a good agreement between all three
models. Photoluminescence (PL) phenomena in as-deposited LPCVD silicon oxy
nitride are presented and compared to results reported in literature. (C) 2
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