1.5 mu m electroluminescence from organic light emitting diodes integratedon silicon substrates

We have produced a silicon based organic light emitting diode (OLED) which emits 1.5 mum electroluminescence at room temperature. The emitting layer u sed was erbium tris(8-hydroxyquinoline) and energy is transferred from exci tons formed on the organic ligands into the erbium ion. Characteristic emis sion is observed through the silicon substrate at 1.5 pm due to the I-4(13/ 2) to I-4(15/2) iatra-atomic transition. Whilst the device is not suited to conventional OLED applications, due to the long lifetime of the I-4(13/2) to I-4(15/2) transition, it is a significant step towards the development o f a 1.5 mum laser which can be integrated onto a silicon waveguide. (C) 200 1 Elsevier Science B.V. All rights reserved.