Examination of the structure of sol-gel derived matrices for optoelectronic sensors

Citation
A. Ulatowska et al., Examination of the structure of sol-gel derived matrices for optoelectronic sensors, OPT MATER, 17(1-2), 2001, pp. 169-173
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
17
Issue
1-2
Year of publication
2001
Pages
169 - 173
Database
ISI
SICI code
0925-3467(200106/07)17:1-2<169:EOTSOS>2.0.ZU;2-Y
Abstract
Sol-gel technology was used to produce glass-like materials doped with diff erent compounds. The sol-gel matrices were prepared on the way of acid hydr olysis. Two types of materials in the form of thin layers were examined: so l-gel bulk type (type I) and thin film type (type II). The structure was vi sualized by means of a light microscope. The microscopic images were digiti zed and their luminances were calculated. The thin film type (type II) matr ices were investigated also by means of small-angle light scattering. The m aterial properties with dopants such as albumin, ruthenium complex and osmi um tetraoxide were examined. The type II matrices showed more homogeneous s tructure. Lower scattering in doped materials than in the pure matrices was observed. (C) 2001 Elsevier Science B.V. All rights reserved.