(InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range

Authors
Mereuta, A Saint-Girons, G Bouchoule, S Sagnes, I Alexandre, F Le Roux, G Decobert, J Ougazzaden, A
Citation
A. Mereuta et al., (InGa)(NAs)/GaAs structures emitting in 1-1.6 mu m wavelength range, OPT MATER, 17(1-2), 2001, pp. 185-188
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
17
Issue
1-2
Year of publication
2001
Pages
185 - 188
Database
ISI
SICI code
0925-3467(200106/07)17:1-2<185:(SEI1M>2.0.ZU;2-A
Abstract
The MOVPE growth of (InGa)(NAs)/GaAs structures with room temperature photo luminescence (RTPL) in 1-1.59 Irm range is presented. Infinite threshold cu rrent densities of 0.095, 1.22 and 2.3 kA/cm(2) at 1.18, 1.22 and 1.24 mum emission wavelengths, for the In(0.35)Ga(0.65)N(gamma)AS(1-gamma)/GaAs quan tum well (QW) laser diodes with 0%, 0.4% and 0.5% of nitrogen, respectively , were obtained. Characteristic temperature (To) values of 82, 117 and 102 K were determined for as-cleaved lasers in the 20-80 degreesC temperature r ange. (C) 2001 Elsevier Science B.V. All rights reserved.