Channel waveguides grown by selective area chemical beam epitaxy

We report here results on buried-channel optical waveguides on GaAsP/GaAs m aterial. These semiconductor devices were fabricated using chemical beam ep itaxy (CBE). We discuss a method using epitaxial growth by selective area c hemical beam epitaxy (SA-CBE). in this case a SiO2-electron cyclotron reson ance (ECR) film was deposited as a mask on the GaAs wafer. We analyze alter native methods where etching techniques were used to define channels on CaA sP/CaAs plane waveguides. Finally, a symmetric light confinement was obtain ed by a second regrowth step of GaAsP. (C) 2001 Elsevier Science B.V. All r ights reserved.