High-quality GaAs-related lateral junctions on Si by conformal growth

Conformal growth consists in a confined lateral selective epitaxy of III-V materials on silicon from III-V oriented seeds, the vertical growth being s topped by an overhanging dielectric mask. Low-dislocation density (a few 10 (4) cm(-2)) GaAs conformal layers can then be achieved exhibiting vertical {1 1 0} or inclined {1 1 1} mono-facetted growth fronts. New n (Si) and p ( Zn) doped, laterally modulated GaAs structures were grown on Si by hydride vapour phase epitaxy (HVPE) using the conformal growth technique. The dopin g distribution was studied using spatially resolved cathodoluminescence (CL ) and Micro-Raman spectroscopy. The feasibility of the conformal growth tec hnique for selective doping was demonstrated and a first lateral n/p juncti on was characterised. (C) 2001 Elsevier Science B.V. All rights reserved.