Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy

Authors
Sanchez-Almazan, F Gendry, M Regreny, P Bergignat, E Grenet, G Hollinger, G Olivares, J Bremond, G Marty, O Pitaval, M
Citation
F. Sanchez-almazan et al., Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy, OPT MATER, 17(1-2), 2001, pp. 271-274
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
17
Issue
1-2
Year of publication
2001
Pages
271 - 274
Database
ISI
SICI code
0925-3467(200106/07)17:1-2<271:GOGAOI>2.0.ZU;2-M
Abstract
Growth of GaInTlAs alloys on InP has been attempted by solid source molecul ar beam epitaxy (MBE). Thallium atoms segregate into droplets on the surfac e at growth temperatures higher than 270 degreesC and evaporate at temperat ures higher than 350 degreesC. Only in the low temperature range (180-270 d egreesC) can thallium be incorporated in some conditions, leading generally to twinned or polycrystalline layers. A narrow window for single-crystalli ne growth has been found for low Tl contents (4%) using optimized growth co nditions. (C) 2001 Elsevier Science B.V. All rights reserved.