Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE

Selective growth experiments of GaAs were carried out by HVPE on (0 0 1) Ga As substrates. [l 1 0] and [1 -1 0] oriented stripes exhibited various morp hological profiles bounded by (0 0 i), (1 1 0) or (1 1 1) faces, depending on the III/V ratio, the supersaturation parameter and the temperature. Crit eria for the appearance of the faces were determined and summarised through straightforward mathematical relations. The growth morphology depends on t he growth anisotropy, precisely on the hierarchies of the growth rates of t he low index faces. Kinetic Wulff constructions were built by referring to the growth rates that were experimentally assessed on (1 1 0) and (1 1 1) s ubstrates. The good adequacy between the constructions and the morphology o f the selective stripes demonstrates again that HVPE growth is mainly gover ned by surface kinetics. (C) 2001 Elsevier Science B.V. All rights reserved .