Irradiation-induced persistent photoconductivity in CdS films prepared by chemical bath deposition

Authors
Narayanan, KL Rajaraman, R Valsakumar, MC Vijayakumar, KP Nair, KGM
Citation
Kl. Narayanan et al., Irradiation-induced persistent photoconductivity in CdS films prepared by chemical bath deposition, OPT MATER, 17(1-2), 2001, pp. 355-358
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
17
Issue
1-2
Year of publication
2001
Pages
355 - 358
Database
ISI
SICI code
0925-3467(200106/07)17:1-2<355:IPPICF>2.0.ZU;2-6
Abstract
Persistent photoconductivity (PPC) in nitrogen ion irradiated CdS thin film s prepared by chemical bath deposition (CBD) technique is reported. The PPC phenomenon observed in the nitrogen ion irradiated CdS thin films is due t o the complex nature of the defects caused during irradiation. Nitrogen ion implantation caused the reduction in the optical band gap of the films rev ealing the formation of defect levels. The structure of the virgin and impl anted films studied using the X-ray diffraction technique is reported. (C) 2001 Elsevier Science B,V. All rights reserved.