Phase-separated states in antiferromagnetic semiconductors with a polarizable lattice - art. no. 014401

Authors
Citation
El. Nagaev, Phase-separated states in antiferromagnetic semiconductors with a polarizable lattice - art. no. 014401, PHYS REV B, 6401(1), 2001, pp. 4401
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6401
Issue
1
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010701)6401:1<4401:PSIASW>2.0.ZU;2-K
Abstract
The possibility of the slab or stripe phase separation (alternating ferroma gnetic highly conductive and insulating antiferromagnetic layers) is proved for isotropic degenerate antiferromagnetic semiconductors. This type of ph ase separation competes with the droplet phase separation (ferromagnetic dr oplets in the antiferromagnetic host or vice versa). The interaction of ele ctrons with optical phonons alone cannot cause phase-separated state with a lternating highly-conductive and insulating regions but it stabilizes the m agnetic phase separation. The magnetostriction deformation of the lattice i n the phase-separated state is investigated.