Hall-conductivity sign change and fluctuations in amorphous NbxGe1-x films- art. no. 014507

Authors
Kokubo, N Aarts, J Kes, PH
Citation
N. Kokubo et al., Hall-conductivity sign change and fluctuations in amorphous NbxGe1-x films- art. no. 014507, PHYS REV B, 6401(1), 2001, pp. 4507
Citations number
43
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6401
Issue
1
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010701)6401:1<4507:HSCAFI>2.0.ZU;2-8
Abstract
The sign change in the Hall conductivity has been studied in thin amorphous Nb1-xGex(x approximate to0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower valu es (from above to below the mean-field transition field H-c2) With increasi ng film thickness. This effect can be understood in terms of a competition between a positive-normal and a negative-fluctuation contribution to the Ha ll conductivity.