Large tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions - art. no. 026602

Authors
Tanaka, M Higo, Y
Citation
M. Tanaka et Y. Higo, Large tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions - art. no. 026602, PHYS REV L, 8702(2), 2001, pp. 6602-NIL_74
Citations number
16
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
8702
Issue
2
Year of publication
2001
Pages
6602 - NIL_74
Database
ISI
SICI code
0031-9007(20010709)8702:2<6602:LTMIGF>2.0.ZU;2-L
Abstract
We have observed very large tunneling magnetoresistance (TMR) in epitaxiall y grown Ga1-xMnxAs/AlAs/Ga1-xMnxAs ferromagnetic semiconductor tunnel junct ions. Large TMR ratios more than 70% (maximum 75%) were obtained in junctio ns with a very thin (less than or equal to1.6 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR was found to rapidly decrease with increasing barrier thickness, which is explained by calculations assuming that the parallel wave vector of carr iers is conserved in tunneling.