Surface conductance near the order-disorder phase transition on Si(100) - art. no. 026802

Authors
Yoo, K Weitering, HH
Citation
K. Yoo et Hh. Weitering, Surface conductance near the order-disorder phase transition on Si(100) - art. no. 026802, PHYS REV L, 8702(2), 2001, pp. 6802-NIL_80
Citations number
24
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
8702
Issue
2
Year of publication
2001
Pages
6802 - NIL_80
Database
ISI
SICI code
0031-9007(20010709)8702:2<6802:SCNTOP>2.0.ZU;2-S
Abstract
The surface conductance of the Si(100)-(2 x 1) surface was measured as a fu nction of temperature on a fully depleted Si(100)/SiO2/Si substrate. The su rface-state conductance is surprisingly large and reveals a clear signature of the c(4 x 2) --> 2 x 1 order-disorder phase transition of buckled Si di mers on Si(100). Surface scattering increases with decreasing c(4 x 2) orde r on the surface.