Effects of dissipation on a superconducting single electron transistor - art. no. 017002

We measure the effect of dissipation on the minimum zero-bias conductance, G(0)(min), of a superconducting single electron transistor (sSET) capacitiv ely coupled to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heter ostructure. Depleting the 2DEG with a back gate voltage decreases the dissi pation experienced by the sSET in situ. We find that G(0)(min) increases as the dissipation is increased or the temperature is reduced; the functional forms of these dependences are compared with the model of Wilhelm et al. i n which the leads coupled to the sSET are represented by lossy transmission lines.