Orientation effects accompanying the propagation of ultrarelativistic electrons through crystals

The results obtained by experimentally investigating the dynamics of the pr opagation of 1.2-GeV electrons through a thin silicon single crystal are di scussed. The orientation dependences of electron scattering into a small so lid angle, which are measured at various scattering angles, under condition s where the effects of crystallographic axes and planes manifest themselves are interpreted. It is shown that there are such electron-scattering direc tions for which the orientation "independence" of the scattering intensity with respect to a specific crystallographic plane is observed and that ther e also exists a crystal-axis orientation for which the region of a uniform angular distribution of the intensity is observed. (C) 2001 MAIK "Nauka/Int erperiodica".