Magnetically stimulated variation of dislocation mobility in plastically deformed n-silicon

Citation
Am. Orlov et al., Magnetically stimulated variation of dislocation mobility in plastically deformed n-silicon, PHYS SOL ST, 43(7), 2001, pp. 1252-1256
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
43
Issue
7
Year of publication
2001
Pages
1252 - 1256
Database
ISI
SICI code
1063-7834(2001)43:7<1252:MSVODM>2.0.ZU;2-C
Abstract
The acoustic emission method is employed for an experimental investigation of the effect of a magnetic field on the mobility of edge dislocations in a plastically deformed n-silicon sample carrying a current. It is found that the preliminary treatment of a dislocated crystal in a constant magnetic f ield (B < 1 T) changes the intensity of its acoustic response depending on the magnetic induction. The observed effect is associated with spin-depende nt magnetosensitive reactions of defects occurring in the vicinity of the d islocation core, which facilitate the detachment of the dislocations from t he stoppers and, hence, increase the mobility of dislocations and the acous tic response of the dislocation structure. (C) 2001 MAIK "Nauka/Interperiod ica".