Ba. Andreev et al., Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method, PHYS SOL ST, 43(6), 2001, pp. 1012-1017
The photoluminescence of semiconducting structures Si : Er: O/Si grown by t
he molecular-beam epitaxy method is studied. The dependences of Er photolum
inescence intensity on the intensity of pumping are measured at the liquid
helium temperature. An analysis of the experimental results on the basis of
the exciton model of excitation of Er ions in a crystalline silicon matrix
reveals the significant role played by an alternative channel of free-exci
ton trapping (apart from the donor energy levels of erbium-oxygen complexes
), as well as that played by the nonradiative channel in the recombination
of excitons, bound to erbium donors, without the excitation of erbium. The
ratio of the concentration of optically active centers of erbium luminescen
ce to the total concentration of introduced erbium is estimated. (C) 2001 M
AIK "Nauka/Interperiodica".