Use of the longitudinal Pockels effect for measuring electroconductivity and photoconductivity of high-resistivity impure silenite crystals

Citation
Av. Ilinskii et al., Use of the longitudinal Pockels effect for measuring electroconductivity and photoconductivity of high-resistivity impure silenite crystals, REV MEX FIS, 47(3), 2001, pp. 286-290
Citations number
6
Categorie Soggetti
Physics
Journal title
REVISTA MEXICANA DE FISICA
ISSN journal
0035001X → ACNP
Volume
47
Issue
3
Year of publication
2001
Pages
286 - 290
Database
ISI
SICI code
0035-001X(200106)47:3<286:UOTLPE>2.0.ZU;2-6
Abstract
Using the electro-optic longitudinal effect we have measured the electro- a nd photo-conductivity in photorefractive sillenite crystals with high resis tivity. We have studied doped samples with aluminum, chromium, vanadium, co balt, iron, and neodimium impurities distributed in the bulk or in a thin r egion near the surface. The data of the electro-optical measurements has be en completed with the spectra of optical absorption in the investigated sam ples.