Influence of packing of radical cations on the conductivity of the new molecular semiconductor (Doet)(2)ReO4

Authors
Gritsenko, VV D'yachenko, OA Kotov, AI Buravov, LI Mizuno, M
Citation
Vv. Gritsenko et al., Influence of packing of radical cations on the conductivity of the new molecular semiconductor (Doet)(2)ReO4, RUSS J C CH, 27(6), 2001, pp. 401-406
Citations number
11
Categorie Soggetti
Inorganic & Nuclear Chemistry
Journal title
RUSSIAN JOURNAL OF COORDINATION CHEMISTRY
ISSN journal
10703284 → ACNP
Volume
27
Issue
6
Year of publication
2001
Pages
401 - 406
Database
ISI
SICI code
1070-3284(200106)27:6<401:IOPORC>2.0.ZU;2-H
Abstract
A new molecular semiconductor, (Doet)(2)ReO4 (Doet is (1,4-dioxanediyl-2,3- dithio)ethylene-dithiotetrahiafulvalene), is synthesized and examined by X- ray diffraction analysis. The crystal structure of (Doef)(2)ReO4 is Formed by [Doet](+1/2) layers with isle [ReO4](-) anions located between them. The Doet radical cations from the adjacent layers are linked by intermolecular hydrogen interactions of the (OH)-H-... type.