Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode consisting of Au/PZT/BIT/pSi multilayer config uration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated h ysteresls loop with P-r = 15 muC/cm(2) acid E-0 = 48 kV/cm, and the decay i n remanent polarization was only 10% after 10(9) switching cycles, meanwhil e the increase in coercive field was 12%. The CV hysteresis loop and the I- V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7 x 10(-8) A/cm(2) at a vol tage of + 4V. Our diode had nonvolatile and nondestructive memory readout o peration. There was a read current disparity of 0.05 muA for logic "1" and logic "0" at a reed voltage of + 2V, and the stored logical value ("1" or " 0") could be read out In 30 min.