Depth profiling of strain using micro-Raman measurements

Citation
A. Atkinson et al., Depth profiling of strain using micro-Raman measurements, SEMIC SCI T, 16(7), 2001, pp. 584-588
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
7
Year of publication
2001
Pages
584 - 588
Database
ISI
SICI code
0268-1242(200107)16:7<584:DPOSUM>2.0.ZU;2-D
Abstract
We describe a method to determine the variation of strain with depth in a s ample using Raman measurements. The method involves recording Raman spectra using incident light having different absorption coefficients. These can b e obtained using a single incident light frequency by adjustment of the poi nt of focus. The Raman spectra are then processed using a Laplace transform to obtain the characteristic elastic strain as a function of depth. The me thod is illustrated using several model strain distributions. It is applica ble to practical. cases such as graded interfaces and strained/relaxed epit axial layers.