A novel diagonal-current injection VCSEL design proposed for nitride lasers

An advanced three-dimensional optical-electrical model has been used for ni tride lasers to design a novel vertical-cavity surface-emitting laser (VCSE L) configuration with a diagonal-current injection (DC-I) mechanism. The de sign has been optimized for the lowest room-temperature (RT) lasing thresho ld which has been found to be similar to RT thresholds of advanced arsenide and phosphide VCSELs. The DCI nitride VCSEL demonstrates very promising an ticipated RT threshold characteristics. Its optical structure is very selec tive: the fundamental mode exhibits distinctly the lowest threshold. In add ition, the lasing threshold has been found to be exponentially proportional to the barrier width.