Analysis and optimal design of Si microstrip detector with overhanging metal electrode

Citation
K. Ranjan et al., Analysis and optimal design of Si microstrip detector with overhanging metal electrode, SEMIC SCI T, 16(7), 2001, pp. 635-639
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
7
Year of publication
2001
Pages
635 - 639
Database
ISI
SICI code
0268-1242(200107)16:7<635:AAODOS>2.0.ZU;2-X
Abstract
The harsh radiation environment to be encountered at LHC (large hadron coll ider) and RHIC (relativistic heavy ion collider) poses a challenging task f or the fabrication of Si microstrip detectors. Due to high luminosities, de tectors are required to sustain very high voltage operation well exceeding the bias voltage needed to fully deplete them. The 'overhanging' metal cont act is now a well established technique for improving the breakdown perform ance of the Si microstrip detector. Based on computer simulation, the influ ence of various physical and geometrical parameters on the electrical break down of the Si detectors equipped with metal overhangs is extensively analy sed. Furthermore, optimization of design parameters is performed to achieve breakdown voltages close to maximum realizable values. The simulation resu lts are found to be in good agreement with experimental data.