A new SiC/HfB2 based low power gas sensor

Citation
F. Solzbacher et al., A new SiC/HfB2 based low power gas sensor, SENS ACTU-B, 77(1-2), 2001, pp. 111-115
Citations number
3
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
77
Issue
1-2
Year of publication
2001
Pages
111 - 115
Database
ISI
SICI code
0925-4005(20010615)77:1-2<111:ANSBLP>2.0.ZU;2-T
Abstract
A new SiC-based heated micro gas sensor with a 100 mum x 100 mum heated mem brane and excellent heater long-term stability is presented. Combining a pr eviously presented micro hotplate with new gas sensitive (2 1 1) oriented I n2O3 thin film layers yields a very stable low power NO2 gas sensor. The mo dular design allows its operation at operating voltages of either 1-2 or 12 -24 V for battery and grid powered automotive applications. A total of 20 m W of power is sufficient for the operation at 250 degreesC. The sensitivity and signal reproducibility in the MAK-range (5 ppm, maximum workplace conc entration according to German federal law) is good. The response time tau ( 50) = 50 s needs improvement. (C) 2001 Elsevier Science B.V. All rights res erved.