New gas sensing mechanism for SnO2 thin-film gas sensors fabricated by using dual ion beam sputtering

Authors
Citation
Ys. Choe, New gas sensing mechanism for SnO2 thin-film gas sensors fabricated by using dual ion beam sputtering, SENS ACTU-B, 77(1-2), 2001, pp. 200-208
Citations number
23
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
77
Issue
1-2
Year of publication
2001
Pages
200 - 208
Database
ISI
SICI code
0925-4005(20010615)77:1-2<200:NGSMFS>2.0.ZU;2-4
Abstract
A new gas sensing mechanism for SnO2 thin-films fabricated by using dual io n beam sputtering, was proposed. The features of the SnO2 thin-film conside red in this study had been characterized as having extremely smooth surface , dense microstructure and near stoichiometric SnO2 phase. In this study, t hus, the problems of reported gas sensor models were noticed briefly and ne xt, a novel sensing model for the SnO2 thin-films prepared in this study wa s approached by geometrical considerations. The effects of resistivity in t he bulk regions and in the depletion regions on the gas sensitivities were studied by fabrication of thin-film gas sensors having various film thickne ss. The proposed gas sensing mechanism was verified by the fabrication of a H2S sensor with p-n junctions. (C) 2001 Elsevier Science B.V. All rights r eserved.