Atomic-layer chemical Vapor deposition of SnO2 for gas-sensing applications

Citation
A. Rosental et al., Atomic-layer chemical Vapor deposition of SnO2 for gas-sensing applications, SENS ACTU-B, 77(1-2), 2001, pp. 297-300
Citations number
16
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
09254005 → ACNP
Volume
77
Issue
1-2
Year of publication
2001
Pages
297 - 300
Database
ISI
SICI code
0925-4005(20010615)77:1-2<297:ACVDOS>2.0.ZU;2-A
Abstract
SnO2 layers are grown from SnCl4 and H2O at 180-300 degreesC on quartz glas s substrates by atomic-layer-chemical-vapor-deposition-like process. The la yers are oxygen deficient, predominantly amorphous and contain chlorine res idues. Their amorphization degree decreases with the growth temperature. Al l the layers are sensitive to CO in air. Perfectly amorphous scanning-force -microscopy-smooth ultrathin (< 10 nm) layers are grown at 180 degreesC. Th e gas sensitivity of the latter paves the way for monograin-equivalent cond uctometric sensors; the presence of a massive uniformity is favorable for s ensor mechanisms studies. (C) 2001 Elsevier Science B.V. All rights reserve d.